Ferroelectricity and reliability performance of HfZrO films
The instability of TiN/HfZrO/TiN ferroelectric capacitors becomes a dominant obstacle in its practical application. To improve this problem, the effects of N-plasma treatment …
AI-mottagningElectromagnetic energy harvesting based on HfZrO tunneling …
Ferroelectric HfZrO (HfO 2 doped with Zr, or Hf x Zr 1−x O 2) was discovered a few years ago, when doping HfO 2 with a range of dopants, including Zr. There is extensive experimental evidence regarding the occurrence of the orthorhombic crystalline structure in HfZrO, which supports ferroelectric behavior [1, 2] cause HfZrO is the first ferroelectric …
AI-mottagningResearch on Fatigue Phenomenon and Internal Mechanism of HfZrO …
The fatigue effect of the HfZrO 2 thin film sample plays a vital role in its application in the semiconductor field. This article explores the fatigue mechanism inside the thin film sample by ...
AI-mottagningModulation of crystal structure and electrical properties of …
By doping the HfZrO 2 thin films with a small amount of Al (about 2.4%), we successfully modulated the crystal structure of the films to only the tetragonal phase, as a …
AI-mottagningHfZrO
Hf0.5Zr0.5O2 （HfZrO） （>5 eV）、 （≤10{le} 10 nm） 。,, （600 °C–1000 °C） （ Pr{P}_{r} ）, ...
AI-mottagningDirect growth of orthorhombic Hf0.5Zr0.5O2 thin films for ...
Xu, J. et al. Ferroelectric HfZrO x-based MoS 2 negative capacitance transistor with ITO capping layers for steep-slope device application. Appl. Phys. Lett. 112, 103104–103108 (2018).
AI-mottagningOrthorhombic-I Phase and Related Phase Transitions: …
Anti-ferroelectric HfZrO thin films exhibit favorable properties for the potential application in advanced embedded DRAM. However, their failure mechanisms are not well-understood yet. In this work, it was confirmed that the orthorhombic-I phase is directly attributed to the anti-ferroelectric characteristics in HfZrO films. Moreover, around the thickness of 6 nm, a …
AI-mottagningSnO–HfZrO nanosheets exhibit ferroelectric and ...
These findings provide strong evidence for ferroelectricity in the SnO–HZO nanosheets. Additionally, a significant piezoelectric response (effective d33 ≈ 10 pm V −1) was observed, estimated from the slope of the piezoresponse amplitude–voltage butterfly loop, uniquely in the SnO–HZO layer.The achieved piezoelectric coefficient for SnO–HZO …
AI-mottagningEnhanced dielectric and energy storage performances of Hf
Moreover, the Al-doped HfZrO 2 thin film with anti-ferroelectricity exhibited excellent energy storage properties with an energy storage density and efficiency of about 53.3 …
AI-mottagningEnhanced Reliability, Switching Speed and Uniformity for …
Abstract: Instead of employing post metal annealing (PMA), post deposition annealing (PDA) was proposed to crystalize HfZrO x (HZO) into the ferroelectric phase on an epitaxial Ge film with higher reliability. Due to the absence of top electrode/HZO reaction during annealing, PDA-processed HZO intrinsically possesses a better capability to control the …
AI-mottagningHfZrO MoS2 …
HZO, (3 nm) HfZrO (HZO) NC 2 nm Al 2 O 3 MoS 2 (NCFET)。 (SS=33.1 mV dec -1 ),/ 1.16נ10 7。 MoS 2。
AI-mottagningThe atomic and electronic structure of Hf0.5Zr0.5O2 and …
To improve the properties of ferroelectric layers, it is necessary to know the atomic and electronic structure of oxygen vacancies in Hf x Zr 1-x O 2 and Hf x Zr 1-x O 2:La. …
AI-mottagningCMOS-compatible ferroelectric NAND flash memory …
HfZrO x showed a positive remnant polarization of +P r = 15.1 μC/cm 2 and a negative remnant polarization of −P r = −13.8 μC/cm 2. The coercive electric field of HfZrO x was ~1.2 MV/cm; this is larger than those of …
AI-mottagningModulation of crystal structure and electrical properties of …
In the XRD pattern of the undoped HfZrO 2 film, monoclinic and tetragonal peaks were simultaneously observed. However, the crystal structure of the HfZrO 2 film changed to only the tetragonal phase after its doping with a small amount of Al (only 1.1%), and the tetragonal phase was maintained with an increase in the Al doping concentration up ...
AI-mottagning(a) XPS of HfZrO on TiN by thermal ALD with HfO2 and ZrO2 …
Download scientific diagram | (a) XPS of HfZrO on TiN by thermal ALD with HfO2 and ZrO2 cycle ratio of 1:1. (b) GA-XRD of as-deposited 30-nm HfZrO with TiN as bottom and top electrodes. (c) P-V ...
AI-mottagningThe origin of stability and ferroelectricity in non-stoichiometric ...
Bégon-Lours L, Mulder M, Nukala P, et al. Stabilization of phase-pure rhombohedral HfZrO 4 in pulsed laser deposited thin films. Phys Rev Mater, 2020, 4: 043401. …
AI-mottagningInvestigation on the Current Conduction Mechanism of HfZrO x ...
Request PDF | On Jul 16, 2020, Wen-Chung Chen and others published Investigation on the Current Conduction Mechanism of HfZrO x Ferroelectric Memory | Find, read and cite all the research you need ...
AI-mottagningFerroelectricity of HfZrO 2 in Energy Landscape With Surface …
Abstract: The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO 2 (HZO) for low-power steep-slope …
AI-mottagning【のセミコン】をられる …
ハフニウム・ジルコニウム(HfZrO)ではが400℃とくてもになることを、20175にIMWでThe University of Texas at Dallas ...
AI-mottagningComparative study on the stability of ferroelectric polarization of HfZrO
This study investigates the stability of the (Hf,Zr)O 2 (HZO) and AlScN thin films against the depolarization effect. In order to adversely interfere with the polarization screening of ferroelectric (FE) film and induce the depolarization effect, an Al 2 O 3 film was inserted between the TiN bottom electrode and the FE film. Subsequently, to minimize charge injection through …
AI-mottagningA Ferroelectric Thin Film Transistor Based on Annealing-Free HfZrO …
A ferroelectric thin film transistor (Fe-TFT) based on annealing-free hafnium zirconium oxide (HfZrO) is demonstrated in this paper. Indium zinc oxide was used as channel semiconductor. The as-deposited 30-nm HfZrO film implemented as gate dielectric was proved to be crystallized with a mixture of monoclinic, tetragonal, and orthorhombic phases and showed …
AI-mottagningFerroelectric (Hf, Zr)O2 Thin Films for High-Density Nonvolatile ...
The HfZrO 2 thin films were deposited on Pt/Al 2 O 3 /SiO 2 /Si substrates by on-axis RF magnetron sputtering at various conditions as listed in Table 2.As the actual surface morphology of the as-received Pt/Al 2 O 3 /SiO 2 /Si substrate found to be depended on the deposition temperature, we used a standard pre-anneal, i.e., 30 min at 700 °C, to stabilize the …
AI-mottagningHfZrOxの・の(C0447)
HfZrOxの・の(C0447) XRD・XAFSによるで、よりなが. . high-kやとしてされているHfZrO x は、によってのがきくすることから、の・ののがな ...
AI-mottagningをいた MOCVD による HfZrO の
をいたMOCVDによるHfZrO2の Fabrication of HfZrO2 thin film from mixed precursor using MOCVD 1, 1,2, 1, 1 （1., 2. JSTさきがけ） Genta Nakano1, Takashi Nakajima1,2, Yoichiro Hashizume1 and Soichiro Okamura1 （1. Sci. Tokyo Univ. of Sci., 2.
AI-mottagning(PDF) On the Characterization and Separation of …
This paper is based on a paper entitled " Investigation of ferroelectric HfZrO FET for steep slope applications," presented at the 2018 IEEE S3S Conference O n t h e c h a r a c t e r i z a t ...
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